With the development of display technology and the fabrication technique, high electric performance p-Si TFTs were used broadly and considered as the perfect substitute for a -Si TFT. Comparing to a-Si TFT, p-Si TFT has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p
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Poly-Si TFTs play an important role for LCD fabrications, enhancing the integration of both active matrix and peripheral driving circuitry on the same substrate. However, poly-Si TFTs lead to some poor effects, like self-heating effect and KINK effect which mainly induced by the inherent SOI (silicon on isolator) structure of thin film transistor. For self-heating
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