Posts Tagged ‘DCXRD’:

Growth of AlInN Material and Investigation of Ultraviolet LED

on May 7th, 2012 by - Comments Off

The band gap of the GaN-based material can be turned between the band gap of 0.7ev and 6.2ev,which is being made across a wide front of light emitters spanning from the Visible spectrum to the ultraviolet spectrum,So,the GaN-based material have the important applications in many fields,such as,navigate,military,some civil industries。GaN based material have applications on LEDs,short

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Materials Growth and Device Fabrication of GaN-based Blue LED on Silicon Substrate

GaN-based nitrides as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short wavelength light-emitting devices, short wavelength lasers, ultraviolet detectors, as well as high temperature, high frequency and high power electronic devices. Sapphire and SiC are the common substrates for GaN expitaxy

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