| Title | Preparation and Properties of Polyimide/Mesoporous Silica Sieve Composite Films with Low Dielectric Constant |
| Abstract | Low dielectric constant materials were explored in order to reduce the resistance capacitance time （RC） delay, cross-talks and power consumption caused by the increasing device densities in ultra-large-scale integrated （ULSI） circuits. Polymer-based dielectric composite films heve been proved to be promising for use in the microelectronics industry. The MCM-41 with the ultra low dielectric constant was mixed into polymers to obtain the low-k composite films.In this work, preparation and properties of polyimide/mesoporous sieve （PI/MCM-41） composite films were studied. The mesoporous sieve MCM-41 was synthesized by the sol-gel method, and low-k PI/MCM-41 composite films with different loading of MCM-41 particles were prepared using the methods of in-situ polymerization and ball-milling, respectively. TEM, SEM, thermal constants analyzer, impedance analyzer were used to characterize the microstructures and measure the thermal and dielectric properties of the achieved PI/MCM-41 composite films. The results showed that MCM-41 particles were dispersed well in PI matrix and the dielectric constant of PI/MCM-41 composite films was decreased to 2.58. Meanwhile, the volume resistivity and breakdown strength were increased to 3.139×1016Ω.m and 255.45 MVm-1, respectively. It was obvious that the dielectric properties of PI/MCM-41 composite films by ball-milling are better than those prepared by in-situ dispersion polymerization. Therefore, this kind of PI/MCM-41 composite films has potential and broad applications in microelectronic industry. |
| Category | Radio |
| Keywords | breakdown strength, low dielectric constant, MCM-41, Polyimide, volume resistivity, |
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| Pages | 165 |
| Price | US$60.00 |
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Preparation and Properties of Polyimide/Mesoporous Silica Sieve Composite Films with Low Dielectric Constant
Billy HU, Ph.D
E-Mail:itpaper@hotmail.com
TEL:1-888-786-998A
